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9 August 2002 Pulsed laser deposition of films and multilayers for optoelectronic applications
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Proceedings Volume 4762, ALT'01 International Conference on Advanced Laser Technologies; (2002) https://doi.org/10.1117/12.478662
Event: International Conference on: Advanced Laser Technologies (ALT'01), 2001, Constanta, Romania
Abstract
Silica, ITO, chalcogenide glass films and multilayers were deposited by excimer laser ablation deposition. Investigations show that good quality stoichiometric silica films can be deposited on substrates at room temperature by ArF laser ablation of SiO in O2 atmosphere. Surface roughness can be kept low (approximately 5 nm). Low- absorbance and low resistivity (1.6x10-6 (Omega) m, the lowest value in literature) ITO films were grown with XeCl laser pulses on substrates heated at 200 degree(s)C. Optical switches were realized with ultra-thin (6-9 nm) ITO films. Rare-earth-doped waveguides were efficiently deposited by ablating Pr3+ -doped chalcogenide glass (70%GeS2-15%Ga2S3-15%CsI-2000 ppm Pr3+) targets in vacuum (1x10-5 Pa by XeCl laser pulses.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. P. Caricato, M. Fernandez, Gilberto Leggieri, Armando Luches, Maurizio Martino, and Francesco Prudenzano "Pulsed laser deposition of films and multilayers for optoelectronic applications", Proc. SPIE 4762, ALT'01 International Conference on Advanced Laser Technologies, (9 August 2002); https://doi.org/10.1117/12.478662
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