16 August 2002 Advanced optical imaging platform for CD metrology and defect review on 130-nm to 100-nm node reticles: an overview of preliminary results
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Proceedings Volume 4764, 18th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2002) https://doi.org/10.1117/12.479349
Event: 18th European Mask Conference on Mask Technology for Integrated Circuits and Micro-Components, 2002, Munich-Unterhaching, Germany
Abstract
Critical Dimension fidelity continues to be one of the key driving parameters defining photomask quality and printing performance. The present advanced optical CD metrology systems, operating at i-line, will very soon be challenged as viable tools owing to their restricted resolution and measurement linearity impact on the ability to produce repeatable measurements. Alternative measurement technologies such as CD-SEM and -AFM have started to appear, but are also not without tier concerns in the field of reticle CD metrology. This paper introduces a new optical metrology system (MueTec </M5k>/) operating at DUV wavelength (248nm), which has been specifically designed to meet the resolution and measurement repeatability requirements of reticle manufacture at the 130nm and 100nm nodes. The system is based upon a specially designed mechanical-optical platform for maximum stability and very advanced optical, illumination, alignment and software systems. The at wavelength operation of this system also makes it an ideal platform for defect printability analysis and review. The system is currently part of a European Commission funded assessment project (IST-2000-28086: McD'OR) to develop a testing strategy to verify the system performance, agree on equipment specifications and demonstrate its capability on advanced production reticles - including long-term reliability. It is the preliminary results from this evaluation that are presented here.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrew C. Hourd, Anthony Grimshaw, Gerd Scheuring, Christian Gittinger, Hans-Juergen Brueck, Shiuh-Bin Chen, Parkson W Chen, Hans Hartmann, Volodymyr Ordynskyy, Rik M. Jonckheere, Vicky Philipsen, Thomas Schaetz, Karl Sommer, "Advanced optical imaging platform for CD metrology and defect review on 130-nm to 100-nm node reticles: an overview of preliminary results", Proc. SPIE 4764, 18th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (16 August 2002); doi: 10.1117/12.479349; https://doi.org/10.1117/12.479349
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