16 August 2002 Measures to achieve 20nm IPL stencil mask distortion
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Proceedings Volume 4764, 18th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2002) https://doi.org/10.1117/12.479353
Event: 18th European Mask Conference on Mask Technology for Integrated Circuits and Micro-Components, 2002, Munich-Unterhaching, Germany
Abstract
From detailed comparisons of stencil mask distortion measurements with Finite Element (FE) analyses the parameters of influence are well known. Most of them are under control of the mask manufacturer, such as the membrane stress level and the etching process. By means of FE analysis the different contributions may be classified. Some of the errors can be reduced if more stringent specifications of the SOI wafer are fulfilled, some of them may be reduced after pre-calculation. Reduction of the remaining placement errors can be achieved if specific means of an Ion Projection Lithography (IPL) tool are applied. These are mainly magnification and anamorphic corrections removing so-called global distortions. The remaining local distortions can be further reduced by applying the concept of thermal mask adjustment (THEMA).
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ernst Haugeneder, A. Chalupka, T Lammer, Hans Loeschner, Frank-Michael Kamm, Thomas Struck, Albrecht Ehrmann, Rainer Kaesmaier, Andreas Wolter, Joerg Butschke, Mathias Irmscher, Florian Letzkus, Reinhard Springer, "Measures to achieve 20nm IPL stencil mask distortion", Proc. SPIE 4764, 18th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (16 August 2002); doi: 10.1117/12.479353; https://doi.org/10.1117/12.479353
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