16 August 2002 Plasma etch of Cr masks utilizing TCP source for a next-generation plasma source
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Proceedings Volume 4764, 18th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2002) https://doi.org/10.1117/12.479363
Event: 18th European Mask Conference on Mask Technology for Integrated Circuits and Micro-Components, 2002, Munich-Unterhaching, Germany
Abstract
In the photomask manufacturing, dry etch process is one of important process and the etch process mainly affects CD uniformity, skew, and Cr slope. We will present newly developed dry etcher system using TCP (transformer coupled plasma) source and its Cr etch performance. We will investigate the performance of TCP source for the uniformity, linearity, and loading effects. CD uniformity of 0.8 um Cr space pattern at 11 x 11 arrays with 135 x 135 mm2 area is below 8 nm and 15 nm in 3 sigma in case of ZEP7000 and IP3500 as resists, respectively. The skew (ASI - ADI) linearity of clear and dark CDs from 0.4 um to 2 um is below 35 nm in case of IP3500. The Cr loading characteristics of TCP source is investigated and the etch process parameter dependence on the loading is verified.
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Hyuk-Joo Kwon, Dong-Soo Min, Pil-Jin Jang, Byung-Soo Chang, Boo-Yeon Choi, Soo-Hong Jeong, "Plasma etch of Cr masks utilizing TCP source for a next-generation plasma source", Proc. SPIE 4764, 18th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (16 August 2002); doi: 10.1117/12.479363; https://doi.org/10.1117/12.479363
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