16 August 2002 Printability of hard and soft defects in 193-nm lithography
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Proceedings Volume 4764, 18th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2002) https://doi.org/10.1117/12.479336
Event: 18th European Mask Conference on Mask Technology for Integrated Circuits and Micro-Components, 2002, Munich-Unterhaching, Germany
Abstract
A systematic attempt has been undertaken to investigate the printability of mask defects for 100nm lithography using 193nm wavelength. The main purpose is the study of soft defects (particles), but hard defects have been taken as a reference. A reticle is designed with programmed soft and chrome defects in cells with different densities. As soft defects resist dots are used. Printability is first assessed by simulation, using ProLith v7.0. Wafers are printed using QUASAR illumination and evaluated by a CD SEM. We demonstrate that aerial image simulations and AIS measurements can predict the qualitative trends in defect printability. A thorough quantitative analysis is presented.
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Vicky Philipsen, Vicky Philipsen, Rik M. Jonckheere, Rik M. Jonckheere, Stephanie Kohlpoth, Stephanie Kohlpoth, Christoph M. Friedrich, Christoph M. Friedrich, Juan Andres Torres, Juan Andres Torres, } "Printability of hard and soft defects in 193-nm lithography", Proc. SPIE 4764, 18th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (16 August 2002); doi: 10.1117/12.479336; https://doi.org/10.1117/12.479336
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