12 July 2002 5d-4f radiative transitions in Ce-doped Si 3-xAlxOyN4-y solid solutions
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Proceedings Volume 4766, XI Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transition Metal Ions; (2002) https://doi.org/10.1117/12.475328
Event: XI Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transition Metal Ions, 2001, Kazan, Russian Federation
Abstract
For the first time the result of luminescent properties investigations of Ce doped Si3-xAlxOyN4-y solid solutions are presented. The interest of the sialon study is due to high radiation hardness and chemical stability of this system. The aims of Ce doping are: 1) the efficient phosphor creation, and 2) the investigation of the host matrix by using Ce as a control mark.
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B V Chernovetz, A V Feopentov, F F Grekov, S B Mikhrim, Alexander N. Mishin, Alexander S. Potapov, "5d-4f radiative transitions in Ce-doped Si 3-xAlxOyN4-y solid solutions", Proc. SPIE 4766, XI Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transition Metal Ions, (12 July 2002); doi: 10.1117/12.475328; https://doi.org/10.1117/12.475328
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