12 July 2002 Er-related luminescence in Si:Er epilayers grown with sublimation molecular-beam epitaxy
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Proceedings Volume 4766, XI Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transition Metal Ions; (2002) https://doi.org/10.1117/12.475319
Event: XI Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transition Metal Ions, 2001, Kazan, Russian Federation
Abstract
The intra-center 4f-shell transitions 4I13/2 yields 4I15/2 of Er3+ ion introduced into Si crystal under original Sublimation Molecular Beam Epitaxy (SMBE) process are investigated by low temperature photoluminescence spectroscopy with resolution down to 0.5 cm-1. Er-related optically active centers detected in SMBE Si:Er/Si structures are classified based on their spectroscopic features. The novel optically active Er- related center Er-1 specific for SMBE Si:Er/Si structures is identified. A novel type of Si:Er/Si structures namely selectively Er-doped multilayer structures with enhanced luminescence efficiency grown in SMBE process is demonstrated. The features of the energy transfer to Er3+ ions in SMBE Si:Er/Si structures as compared with ion implanted Si:Er/Si structures are discussed.
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B. A. Andreev, B. A. Andreev, Z. F. Krasil'nik, Z. F. Krasil'nik, D. I. Kryzhkov, D. I. Kryzhkov, V. P. Kuznetsov, V. P. Kuznetsov, E. N. Morozova, E. N. Morozova, V. B. Shmagin, V. B. Shmagin, M. V. Stepikohova, M. V. Stepikohova, A. N. Yablonskii, A. N. Yablonskii, } "Er-related luminescence in Si:Er epilayers grown with sublimation molecular-beam epitaxy", Proc. SPIE 4766, XI Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transition Metal Ions, (12 July 2002); doi: 10.1117/12.475319; https://doi.org/10.1117/12.475319
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