Paper
1 November 1987 Direct Dc To Rf Conversion By Picosecond Optoelectronic Switching
C. S. Chang, M. C. Jeng, M. J. Rhee, Chi H. Lee, A. Rosen, H. Davis
Author Affiliations +
Proceedings Volume 0477, Optical Technology for Microwave Applications I; (1987) https://doi.org/10.1117/12.942620
Event: 1984 Technical Symposium East, 1984, Arlington, United States
Abstract
We report dc to rf conversion, using picosecond optoelectronic switches for the first time. A rf pulse train of two and one half cycles has been obtained having a period of 4ns and a voltage switch-out efficiency better than 90%. This device exhibits future potential for high power pulse generation at high frequencies.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. S. Chang, M. C. Jeng, M. J. Rhee, Chi H. Lee, A. Rosen, and H. Davis "Direct Dc To Rf Conversion By Picosecond Optoelectronic Switching", Proc. SPIE 0477, Optical Technology for Microwave Applications I, (1 November 1987); https://doi.org/10.1117/12.942620
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Switches

Picosecond phenomena

Optoelectronics

Electrodes

Pulsed laser operation

Resistance

Silicon

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