PROCEEDINGS VOLUME 4776
INTERNATIONAL SYMPOSIUM ON OPTICAL SCIENCE AND TECHNOLOGY | 7-11 JULY 2002
Solid State Lighting II
INTERNATIONAL SYMPOSIUM ON OPTICAL SCIENCE AND TECHNOLOGY
7-11 July 2002
Seattle, WA, United States
Section
Proc. SPIE 4776, Visible LEDs: the trend toward high-power emitters and remaining challenges for solid state lighting, 0000 (26 November 2002); doi: 10.1117/12.457111
Proc. SPIE 4776, Lighting energy consumption trends and R&D opportunities, 0000 (26 November 2002); doi: 10.1117/12.457121
Solid State Lighting Sources I
Proc. SPIE 4776, Quaternary InAIGaN-based multiquantum wells for ultraviolet light-emitting diode application, 0000 (26 November 2002); doi: 10.1117/12.457171
Proc. SPIE 4776, Design of multichip LED module for lighting application, 0000 (26 November 2002); doi: 10.1117/12.457151
Proc. SPIE 4776, High-brightness LEDs in aerospace applications, 0000 (26 November 2002); doi: 10.1117/12.452576
Applications of Solid State Lighting
Proc. SPIE 4776, Chromaticity and color temperature for achitectural lighting, 0000 (26 November 2002); doi: 10.1117/12.457165
Proc. SPIE 4776, Color rendering properties of LED light sources, 0000 (26 November 2002); doi: 10.1117/12.452574
Proc. SPIE 4776, Refrigerated display case lighting with LEDs, 0000 (26 November 2002); doi: 10.1117/12.452570
Solid State Lighting Sources II
Proc. SPIE 4776, Progress in III-nitride-based white light sources, 0000 (26 November 2002); doi: 10.1117/12.457167
Proc. SPIE 4776, Growth of homoepitaxial GaN layers and GaN/AlGaN multiple quantum wells on GaN single-crystal substrates by molecular-beam epitaxy, 0000 (26 November 2002); doi: 10.1117/12.452580
Solid State Lighting Sources III
Proc. SPIE 4776, Influence of defects on electrical and optical characteristics of GaN/InGaN-based light-emitting diodes, 0000 (26 November 2002); doi: 10.1117/12.452581
Proc. SPIE 4776, Enhanced performances of InGaN-based light-emitting diode by a micro-roughened p-GaN surface using metal clusters, 0000 (26 November 2002); doi: 10.1117/12.452565
Phosphor Technology
Proc. SPIE 4776, Illumination-grade white LEDs, 0000 (26 November 2002); doi: 10.1117/12.457123
Proc. SPIE 4776, Green phosphor-converted LED, 0000 (26 November 2002); doi: 10.1117/12.456557
Proc. SPIE 4776, Radiation-induced defects and stimulated luminescence processes in lanthanum oxyhalide phosphors for lighting, CRT (cathode ray tube), and medical applications, 0000 (26 November 2002); doi: 10.1117/12.452563
Proc. SPIE 4776, Synthesis of ZnS:Sm thin films from volatile complex compounds, 0000 (26 November 2002); doi: 10.1117/12.452564
Solid State Lighting Sources IV
Proc. SPIE 4776, Evaluating white LEDs for outdoor landscape lighting application, 0000 (26 November 2002); doi: 10.1117/12.452571
Proc. SPIE 4776, Side-emitting high-power LEDs and their application in illumination, 0000 (26 November 2002); doi: 10.1117/12.457155
Applications of Solid State Lighting
Proc. SPIE 4776, Die-attach epoxy reliability of InGaN LEDs, 0000 (26 November 2002); doi: 10.1117/12.457160
Solid State Lighting Sources IV
Proc. SPIE 4776, Nitride LED chip separation technologies, 0000 (26 November 2002); doi: 10.1117/12.457158
Proc. SPIE 4776, Modeling and circuit simulation of GaN-based light-emitting diodes for optimum efficiency through uniform current spreading, 0000 (26 November 2002); doi: 10.1117/12.452586
Packaging Technology
Proc. SPIE 4776, White LED sources for vehicle forward lighting, 0000 (26 November 2002); doi: 10.1117/12.452569
Proc. SPIE 4776, Optical elements for mixing colored LEDs to create white light, 0000 (26 November 2002); doi: 10.1117/12.452572
Proc. SPIE 4776, Thermal challenges facing new-generation light-emitting diodes (LEDs) for lighting applications, 0000 (26 November 2002); doi: 10.1117/12.452579
Proc. SPIE 4776, Optimizing the external light extraction of nitride LEDs, 0000 (26 November 2002); doi: 10.1117/12.457208
Solid State Lighting Sources V
Proc. SPIE 4776, Color and brightness discrimination of white LEDs, 0000 (26 November 2002); doi: 10.1117/12.452575
Proc. SPIE 4776, Reduction in leakage current of InGaN-based light-emitting diodes by N2O plasma passivation, 0000 (26 November 2002); doi: 10.1117/12.452566
Proc. SPIE 4776, Development of a circadian light source, 0000 (26 November 2002); doi: 10.1117/12.469722
Phosphor Technology
Proc. SPIE 4776, Long-UV excited white-emitting phosphors, 0000 (26 November 2002); doi: 10.1117/12.469724
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