26 November 2002 Quaternary InAIGaN-based multiquantum wells for ultraviolet light-emitting diode application
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Abstract
High quality InAlGaN alloys, quantum wells and associated light emitting diodes have been grown by metalorganic chemical vapor deposition for ultraviolet (UV) emitters. In-situ reflection and ex-situ atomic force microscopy measurements show that InAlGaN epilayers and structures have good surface morphology. InAlGaN epilayers have also a narrow (0006) reflection X-ray diffraction rocking curve linewidth of ~ 340 arcsec and a strong band edge photoluminescence (PL) emission peak from 320 nm to 355 nm at room temperature. Several X-ray satellite peaks were observed from InAlGaN based quantum well structures, revealing that they were periodic with good interfaces. PL mapping measurements of the quantum well structures show excellent wavelength uniformity over a 2" wafer with a standard deviation of ~ 0.4% for structures emitting from 351-372 nm. Ultraviolet light emitting diodes (UV LEDs) based on the same InAlGaN quantum well structures have an electroluminescence (EL) emission at ~ 375 nm with a linewidth of ~10 nm and an excellent wavelength uniformity of less than 1 nm across a 2" wafer. Temperature dependent study of EL spectrum from an UV LED shows "blue jump" from a broad blue emission at <170 K to a narrow UV emission at higher temperatures.
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Shiping Guo, Milan Pophristic, Dong S. Lee, Boris Peres, Ian T. Ferguson, Jinhyun Lee, Marek Osinski, "Quaternary InAIGaN-based multiquantum wells for ultraviolet light-emitting diode application", Proc. SPIE 4776, Solid State Lighting II, (26 November 2002); doi: 10.1117/12.457171; https://doi.org/10.1117/12.457171
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