26 November 2002 Reduction in leakage current of InGaN-based light-emitting diodes by N2O plasma passivation
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Abstract
The effect of N2O plasma treatment on the reverse leakage currents of InGaN/GaN multiple-quantum well (MQW) light-emitting diodes (LEDs) was investigated. The reverse leakage current of MQW LED chip treated with an N2O plasma was decreased by about 3 orders of magnitude at low reverse voltages compared to that of untreated sample. This could be attributed to the passivation of surface and sidewall damages that were produced by the dry etching process to obtain a reliable pattern transfer. These results suggest that the nonradiative leakage current MQW LED chip can be greatly reduced by N2O plasma passivation, resulting in an improvement in the performance and reliability of MQW LED chip.
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Hyun Min Kim, Chul Huh, Seong-Ju Park, "Reduction in leakage current of InGaN-based light-emitting diodes by N2O plasma passivation", Proc. SPIE 4776, Solid State Lighting II, (26 November 2002); doi: 10.1117/12.452566; https://doi.org/10.1117/12.452566
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