11 November 2002 Ag-Sb-Te system for phase change optical data storage
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Abstract
For phase change optical data storage, several chalcogenide-based materials have been reported and are expected to replace the conventional magnetic disk. In the present work, preparation and characterization of the chalcogenide allow Agx - Sb 2(1-x) - Te 3(1-x) with different composition (x = 0.16, 0.18 and 0.20) has been presented. Samples were prepared using melt quenching technique and the films were grown by thermal evaporation system. The crystallization process of Ag- Sb- Te material was studied using differential thermal analysis (DTA) and Optical analysis (Transmittance and reflectance) respectively. The films were studied for both cases: before and after annealing. The Differential thermal analysis curves were recorded for different compositions and Glass transition temperature (Tg), crystallization temperature (Tc) and melting temperature (Tm) have been obtained. It may also be concluded that Tg/Tm ratio is closer to required condition for phase change optical data storage material. Thermal and optical analysis shows that the Ag - Sb- Te material is a potential candidate for phase change optical data storage. The optimized composition has also been obtained.
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Yagya Deva Sharma, Promod K. Bhatnagar, "Ag-Sb-Te system for phase change optical data storage", Proc. SPIE 4779, Advanced Characterization Techniques for Optical, Semiconductor, and Data Storage Components, (11 November 2002); doi: 10.1117/12.453720; https://doi.org/10.1117/12.453720
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