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24 December 2002 Heat stability of Mo/Si multilayers inserted with silicon oxide layers
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Abstract
The Mo/Si multilayers inserted with the SiO2 layers with 2.0 nm in thickness have been proven to be thermally more stable than the conventional Mo/Si multilayer. The Mo/Si/SiO2 multilayer inserted with the SiO2 layers at the Mo-on-Si interfaces had a relatively high soft X-ray reflectivity even after annealing at 400°C. The Mo/SiO2/Si/SiO2 multilayer was structurally the most stable against annealing but the soft X-ray reflectivity of this multilayer was quite small because of the absorption of X-rays by oxygen. To minimize the deterioration of the soft X-ray reflectivity of the Mo/SiO2/Si/SiO2 multilayer with keeping the high heat stability, the optimum thicknesses of the inserted SiO2 layers have been investigated. We have found that the Mo/SiO2/Si/SiO2 multilayer having asymmetric SiO2 layer thicknesses at the Si-on-Mo interface (0.5 nm) and at the Mo-on-Si interface (1.5 nm) has thermally the most stable structure and maintains a high soft X-ray reflectivity after annealing.
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Masahiko Ishino, Osamu Yoda, Kazuo Sano, and Masato Koike "Heat stability of Mo/Si multilayers inserted with silicon oxide layers", Proc. SPIE 4782, X-Ray Mirrors, Crystals, and Multilayers II, (24 December 2002); https://doi.org/10.1117/12.451346
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