Microstructure of Mo/Si multilayers with barrier layers

Stefan Braun; Hermann Mai; Matthew Moss; Roland Scholz

doi:10.1117/12.453818

24 December 2002 Microstructure of Mo/Si multilayers with barrier layers

Stefan Braun, Hermann Mai, Matthew Moss, Roland Scholz

Proceedings Volume 4782, X-Ray Mirrors, Crystals, and Multilayers II; (2002) https://doi.org/10.1117/12.453818
Event: International Symposium on Optical Science and Technology, 2002, Seattle, WA, United States

Abstract

Mo/Si multilayers with and without diffusion barrier layers have been prepared by dc magnetron sputter deposition. The introduction of C and B₄C barrier layers reduces the formation of the well-known MoSi_x intermixing zones on the interfaces and improves the optical contrast between absorber and spacer layers. Using these barriers the EUV reflectivity was increased from 68.7% (λ=13.46nm, α=1.5°) for pure Mo/Si multilayers to 69.9% (λ=13.5nm, α=1.5°) for Mo/B₄C/Si/C multilayers. The microstructure of the layers has been investigated by HRTEM, X-ray diffractometry, Cu-Kα-and EUV-reflectometry. The introduction of thin C and B₄C barrier layers (d=0.2-0.5nm) on the Mo-on-Si interface shifts the amorphous-to-crystalline transition to Mo layer thicknesses >2nm and reduces the size of the Mo crystallites. In multilayers with period thicknesses between 6.5nm and 7.0nm the optimum Mo layer thickness is close to the transition thickness. Therefore small changes of the ratio =d_Mo/d_period result in amorphous or crystalline Mo layers. In both cases EUV reflectivities >69% are observed.

Citation Download Citation

Stefan Braun, Hermann Mai, Matthew Moss, and Roland Scholz "Microstructure of Mo/Si multilayers with barrier layers", Proc. SPIE 4782, X-Ray Mirrors, Crystals, and Multilayers II, (24 December 2002); https://doi.org/10.1117/12.453818

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