Grain geometry effect on responsivity of semiconducting HgI2/polymer x-ray detectors

Yehezkel Saado; Michael M. Schieber

doi:10.1117/12.465800

10 January 2003 Grain geometry effect on responsivity of semiconducting HgI₂/polymer x-ray detectors

Yehezkel Saado, Michael M. Schieber

Proceedings Volume 4784, X-Ray and Gamma-Ray Detectors and Applications IV; (2003) https://doi.org/10.1117/12.465800
Event: International Symposium on Optical Science and Technology, 2002, Seattle, WA, United States

Abstract

Recently developed semiconducting HgI₂ polymeric composite x-ray detectors are very promising for digital radiography and non-destructive testing. We present a new model that explains well the variation of the detector's sensitivity with applied bias and crystallite shape and size, based on charge transport between grain boundaries through the polymeric layer gaps. A previously published model, which was developed for a different polymer/semiconductor composite failed to account for many details of our experimental results. The new polymeric binder presented in the present paper showed non-linear dark current versus voltage dependence, and a higher sensitivity. At the low voltage range, it showed a higher sensitivity for a reduced grain size. The new model addresses the grain geometry as an important factor, and accounts well to most sensitivity characteristics of our detectors. The model excludes itself from a debate in the literature concerning specifics of charge transport mechanisms in composites containing electrically conducting particles. However, certain charge transport between neighbor crystallites is necessary in order to explain the experimental results.

Citation Download Citation

Yehezkel Saado and Michael M. Schieber "Grain geometry effect on responsivity of semiconducting HgI₂/polymer x-ray detectors", Proc. SPIE 4784, X-Ray and Gamma-Ray Detectors and Applications IV, (10 January 2003); https://doi.org/10.1117/12.465800

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