Paper
10 January 2003 Photoluminescence of CdTe crystals grown by 'contactless' PVT method
Witold Palosz, K. Grasza, Phillip R. Boyd, Yunlong Cui, Gomez W. Wright, U. N. Roy, Arnold Burger
Author Affiliations +
Abstract
High quality CdTe crystals with resistivities higher than 108 Ω cm were grown by the 'contactless' PVT technique. Group III elements In and Al, and the transition metal Sc were introduced at the nominal level of about 6 ppm to the source material. Low-temperature photoluminescence (PL) has been employed to identify the origins of PL emissions of the crystals. It was found that the emission peaks at 1.584 eV and 1.581 eV exist only in the In-doped crystal. The result suggests that the luminescence line at 1.584 eV is associated with Cd-vacancy/indium complex. The intensity of the broadband centered at 1.43 eV decreases dramatically with introduction of Sc.
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Witold Palosz, K. Grasza, Phillip R. Boyd, Yunlong Cui, Gomez W. Wright, U. N. Roy, and Arnold Burger "Photoluminescence of CdTe crystals grown by 'contactless' PVT method", Proc. SPIE 4784, X-Ray and Gamma-Ray Detectors and Applications IV, (10 January 2003); https://doi.org/10.1117/12.455696
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KEYWORDS
Crystals

Cadmium

Luminescence

Aluminum

Indium

Phonons

Chemical elements

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