10 January 2003 Photoluminescence of CdTe crystals grown by 'contactless' PVT method
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High quality CdTe crystals with resistivities higher than 108 Ω cm were grown by the 'contactless' PVT technique. Group III elements In and Al, and the transition metal Sc were introduced at the nominal level of about 6 ppm to the source material. Low-temperature photoluminescence (PL) has been employed to identify the origins of PL emissions of the crystals. It was found that the emission peaks at 1.584 eV and 1.581 eV exist only in the In-doped crystal. The result suggests that the luminescence line at 1.584 eV is associated with Cd-vacancy/indium complex. The intensity of the broadband centered at 1.43 eV decreases dramatically with introduction of Sc.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Witold Palosz, Witold Palosz, K. Grasza, K. Grasza, Phillip R. Boyd, Phillip R. Boyd, Yunlong Cui, Yunlong Cui, Gomez W. Wright, Gomez W. Wright, U. N. Roy, U. N. Roy, Arnold Burger, Arnold Burger, } "Photoluminescence of CdTe crystals grown by 'contactless' PVT method", Proc. SPIE 4784, X-Ray and Gamma-Ray Detectors and Applications IV, (10 January 2003); doi: 10.1117/12.455696; https://doi.org/10.1117/12.455696

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