5 December 2002 Annealing study of Cd1-xZnxTe crystals by IR transmission and micro-Raman spectrum
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Abstract
The Cd-annealing effects on Cd1-xZnxTe wafers were studied by means of IR transmission and micro-Raman spectrum. The experiments and theoretical analysis demonstrated that the free carrier absorption related to the Cd vacancies resulted in the IR extinction as observed in the transmission spectra. The Raman spectra showed that Raman scattering is a more sensitive method to detect the fine Te precipitates in the Cd1-xZnxTe substrates. The Raman scattering peaks related to the Te precipitates could be found in both the as grown and the annealed samples. The relative intensity of the Te scattering peaks became weaker after Cd-annealing. This result also indicated that it was quite difficult to eliminate the fine Te precipitates entirely through annealing process.
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Yanfeng Wei, Yanfeng Wei, Weizheng Fang, Weizheng Fang, Congfeng Liu, Congfeng Liu, Jianrong Yang, Jianrong Yang, Li He, Li He, } "Annealing study of Cd1-xZnxTe crystals by IR transmission and micro-Raman spectrum", Proc. SPIE 4795, Materials for Infrared Detectors II, (5 December 2002); doi: 10.1117/12.451924; https://doi.org/10.1117/12.451924
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