5 December 2002 Electrochemical CdTe deposition for HgCdTe surface passivation
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Abstract
CdTe films have been electrodeposited on HgCdTe from ethylene glycol based electrolyte containing 50 mM CdSO4, 10 mM K2TeO3 and 0.1 M HClO4. Deposition potential range with respect to a saturated calomel reference electrode was determined through cyclic voltammetry technique. RBS data showed that films deposited at potential range between -0.4 to -0.5 V have nearly stoichiometric Cd/Te atomic ratio. At the same time, highly oriented and smoother films were obtained at potential range were stoichiometric CdTe films were electrodeposited through nitrogen bubbling process. By adopting constant potential deposition technique could be obtained between electrodeposited CdTe and HgCdTe substrate showing high frequency capacitance-voltage (C-V) characteristics. Electrodeposited CdTe film can be used as a passivant for LWIR HgCdTe photodiodes.
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Jong-Hwa Choi, Hee Chul Lee, "Electrochemical CdTe deposition for HgCdTe surface passivation", Proc. SPIE 4795, Materials for Infrared Detectors II, (5 December 2002); doi: 10.1117/12.453820; https://doi.org/10.1117/12.453820
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