5 December 2002 Improved model of HgCdTe's pseudo dielectric function for in-situ ellipsometry data analysis during MBE growth
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Abstract
A Woollam M88 spectroscopic ellipsometer was used to characterize the molecular beam epitaxy growth nucleation of Hg1-xCdxTe layers on CdZn0.035Te substrates and the substrate temperature prior to the growth. We developed a new approach to ellipsometry data analysis to better determine the substrate temperature. It is based on the accurate determination of the critical point energies and linewidths, which display strong temperature dependence in the CdZnTe system. The new model was able to resolve temperature differences of the order of +/-2.5oC. We also show that ellipsometry can be used to characterize the nucleation of Hg1-xCdxTe on CdZnTe substrates. More work is in progress to assess the run-to-run reproducibility of our temperature measurement, and to further investigate Hg1-xCdxTe nucleation.
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Giacomo Badano, James W. Garland, Jun Zhao, Sivalingam Sivananthan, "Improved model of HgCdTe's pseudo dielectric function for in-situ ellipsometry data analysis during MBE growth", Proc. SPIE 4795, Materials for Infrared Detectors II, (5 December 2002); doi: 10.1117/12.451906; https://doi.org/10.1117/12.451906
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