5 December 2002 Influence of photoresist feature geometry on ECR plasma-etched HgCdTe trenches
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Abstract
Factors that affect width and aspect ratio in electron cyclotron resonance (ECR) etched HgCdTe trenches are investigated. The ECR etch bias and anisotropy are determined by photoresist feature erosion rate. The physical characteristics of the trenches are attributed to ECR plasma etch chemistry.
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J. David Benson, Andrew J. Stoltz, Andrew W. Kaleczyc, Mike Martinka, Leo Anthony Almeida, Phillip R. Boyd, John H. Dinan, "Influence of photoresist feature geometry on ECR plasma-etched HgCdTe trenches", Proc. SPIE 4795, Materials for Infrared Detectors II, (5 December 2002); doi: 10.1117/12.451921; https://doi.org/10.1117/12.451921
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