Paper
5 December 2002 Optical and electronic characterization on HgCdTe materials
Junhao Chu, Young Chang, Zhiming Huang, Yongsheng Gui, X. G. Wang, X. F. Lu, Li He, Dingyuan Tang
Author Affiliations +
Abstract
Some new results about the optical and electronic characterization on HgCdTe materials have been reported in this paper. The photoluminescence measurements for HgCdTe sample have been performed to characterize the impurities states in HgCdTe and the quality of the crystal perfection. The optical constants in the energy region below, near and above the energy gap for Hg1-xCdxTe materials have been investigated by infrared spectroscopic ellipsometry measurements using a monochromatic dispersion infrared ellipsometer in the wavelength region of 2 to 12.5μm. Variable magnetic field Hall measurements (0-10T) were performed on MBE-grown Hg1-xCdxTe films and on boron ion implanted bulk n-type Hg1-xCdxTe at various temperatures (1.2 ~300K). By a hybrid approach consisting of mobility spectrum (MS) analysis followed by a multi-carrier fitting (MCF) procedure, the contributions to the total conductivity arising from all kinds of carriers in the sample including in the bulk and on the surface layer have been separated. The Cd composition distribution image for HgCdTe sample has been realized by using a thermal image system from measuring the transmittance distribution and calculating the composition distribution.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Junhao Chu, Young Chang, Zhiming Huang, Yongsheng Gui, X. G. Wang, X. F. Lu, Li He, and Dingyuan Tang "Optical and electronic characterization on HgCdTe materials", Proc. SPIE 4795, Materials for Infrared Detectors II, (5 December 2002); https://doi.org/10.1117/12.452272
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KEYWORDS
Cadmium

Mercury

Mercury cadmium telluride

Tellurium

Electrons

Luminescence

Infrared spectroscopy

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