5 December 2002 Progress in far-infrared detection technology
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Abstract
II-VI intrinsic very long wavelength infrared (VLWIR, λc~20 to 50 μm) materials, HgCdTe alloys as well as HgCdTe/CdTe superlattices, were grown by molecular beam epitaxy (MBE). The layers were characterized by means of X-ray diffraction, conventional Fourier transform infrared spectroscopy, Hall effect measurements and transmittance electron microscopy (TEM). Photoconductor devices were processed and their spectral response was also measured to demonstrate their applicability in the VLWIR region.
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Yongdong Zhou, Yongdong Zhou, Charles R. Becker, Charles R. Becker, Renganathan Ashokan, Renganathan Ashokan, Yusuf Selamet, Yusuf Selamet, Yong Chang, Yong Chang, Rita T. Boreiko, Rita T. Boreiko, Albert L. Betz, Albert L. Betz, Sivalingam Sivananthan, Sivalingam Sivananthan, "Progress in far-infrared detection technology", Proc. SPIE 4795, Materials for Infrared Detectors II, (5 December 2002); doi: 10.1117/12.452270; https://doi.org/10.1117/12.452270
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