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15 October 1984 Direct-Write Electron Beam Patterning Reregistration And Metrology
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Proceedings Volume 0480, Integrated Circuit Metrology II; (1984)
Event: 1984 Technical Symposium East, 1984, Arlington, United States
To pattern high resolution integrated circuit substrates for multilevel fabrication processes demands exacting alignment and reregistration procedures of a direct-write electron beam exposure system. A laboratory spot-electron-beam direct-write exposure system (LEBES-D, Perkin-Elmer/ETEC) using a laser interferometer controlled stage with a stage error loop to the beam deflection subsystem has been adopted for fine line patterning applications. Single and multiple subfield overlay writing are performed with undesirable errors stemming from both operator and equipment subsystem factors. An optically read vernier metrology method is used to measure overlay errors to below 0.1 microns.
© (1984) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
William B. Glendinning and Wayne M. Goodreau "Direct-Write Electron Beam Patterning Reregistration And Metrology", Proc. SPIE 0480, Integrated Circuit Metrology II, (15 October 1984); doi: 10.1117/12.943059;

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