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15 October 1984 Precision Linewidth Measurement Using A Scanning Electron Microscope
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Proceedings Volume 0480, Integrated Circuit Metrology II; (1984) https://doi.org/10.1117/12.943052
Event: 1984 Technical Symposium East, 1984, Arlington, United States
Abstract
The trend to smaller feature sizes in the integrated circuit industry has resulted in the need to measure linewidths, periodicities, and registration and overlay errors with greater accuracy and precision. The scanning electron microscope (SEM) has potential as a measurement tool for fine line geometries due to its increased resolution and depth of field compared to optical systems. However, the unique and precise determination of magnification in the SEM is a difficult task without the use of tedious calibration procedures which typically must be performed each time a magnification-determining instrument parameter is altered. A new measurement technique is described which effectively eliminates the need for SEM magnification calibration when performing measurements over a broad range of operating conditions. Examples of measurements made on resist-coated silicon, chrome-on-glass masks, and the NBS 484 standard reference material are presented to illustrate the effectiveness of the new differential measurement technique.
© (1984) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dieter G. Seiler and D. Vernon Sulway "Precision Linewidth Measurement Using A Scanning Electron Microscope", Proc. SPIE 0480, Integrated Circuit Metrology II, (15 October 1984); https://doi.org/10.1117/12.943052
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