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15 October 1984 Sem Metrology: Effects Due To Topography And Composition
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Proceedings Volume 0480, Integrated Circuit Metrology II; (1984)
Event: 1984 Technical Symposium East, 1984, Arlington, United States
SEM metrology is shown to be the technique of choice for linewidth measurements in cases where high-resolution (0.01 μm, 3-sigma), small sample height (0.005 μm), and large depth-of-focus (DOF>1 μm) are appropriate. Examples are submicron structures, materials with varying surface roughness, and patterned materials with high aspect ratios, respectively. The most consistent measurements are made when compositional contrast is suppressed by gold coating so that the structure in the secondary electron profiles is dominated by topography. Topographic effects due to grain size in aluminum and standing wave structure in photoresist are readily observed.
© (1984) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. Monahan, D. Gates, W. Mah, B. Richardson, and J. Wilcox "Sem Metrology: Effects Due To Topography And Composition", Proc. SPIE 0480, Integrated Circuit Metrology II, (15 October 1984);

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