20 November 2002 Ferroelectric polymers for advanced polymeric light emitting devices
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Abstract
Advanced device structures are proposed for high-performance polymeric light emitting diodes based on the ferroelectric, pyroelectric, and piezoelectric properties of the very thin crystalline Langmuir-Blodgett films of P(VDF-TrFE). This ferroelectric incorporated polymeric light emitting diode structure has a capability to lower the barrier height for efficient carrier injection and modulate the balance of the carriers for enhanced quantum efficiency. The barrier height can be reduced up to 1 eV while the tunneling barrier width can be modulated up to 8&percent;. This can be achievable only using the crystalline thin films of P(VDF-TrFE).
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Jaewu Choi, Jaewu Choi, Dan Tang, Dan Tang, Young-Sik Song, Young-Sik Song, Yang Zhao, Yang Zhao, } "Ferroelectric polymers for advanced polymeric light emitting devices", Proc. SPIE 4803, Photorefractive Fiber and Crystal Devices: Materials, Optical Properties, and Applications VIII, (20 November 2002); doi: 10.1117/12.452708; https://doi.org/10.1117/12.452708
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