20 November 2002 Investigation of nonlinear optical properties of ion-implanted and high-pulse laser deposition SiC:Ge:waveguide
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Abstract
The feasibility of using the combined advantage of ion implantation and laser ablation to form a waveguide has been investigated in SiC implanted with Oxygen 2 MeV wiht concentration of 2-3 × 1017 ions/cm2 and Au2+ 2 MeV with concentration of 1x1016 ions/cm2. Then a 2-micron Ge thin film was deposited on the surface with pulsed laser ablation to form a multilayer waveguide. It is shown that the waveguide acts as a laser wavelength differentiator under thermal stress achieving high selcitivy of wavelength in 9.6 micron using CO2 laser. Electron paramagnetic results ffor this material will be presented as well to show the possible sites of doped and implanted ions.
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Abdalla M. Darwish, A. Elsamadecy, Brent D. Koplitz, Harold J. Colclough, G. Gomlak, R. Combs, A. Jalbout, Mohan D. Aggarwal, Dariush Ila, "Investigation of nonlinear optical properties of ion-implanted and high-pulse laser deposition SiC:Ge:waveguide", Proc. SPIE 4803, Photorefractive Fiber and Crystal Devices: Materials, Optical Properties, and Applications VIII, (20 November 2002); doi: 10.1117/12.453582; https://doi.org/10.1117/12.453582
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