23 October 2002 Effect of annealing temperature on physical properties of thin epitaxial PZT films on STO/Si substrates
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Abstract
In this work, we report the effect of annealing temperature on the properties of epitaxial PbZr0.52Ti0.48O3 (PZT) films deposited using sol-gel techniques on (001) Si substrates with a thin, epitaxial SrTiO3 (STO) interlayer. The STO is grown on silicon using molecular beam epitaxy (MBE) and acts as the template for PZT growth. We report the values for stress, density, thickness, and refractive index vs. anneal temperatures for a thin PZT film. AFM surface roughness values of less than 0.4 nm are typical for this film. XRD patterns show the film to be c-axis orientated, with PHI scans demonstrating that the [100] PZT is orientated along the [110] Si direction. SEM cross-sections show the film morphology is free of gain boundaries and are clear of interfacial layers from the multiple spin/bake/anneal deposition technique, thereby making this material an excellent candidate for electro-optic applications.
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Steven M. Smith, Steven M. Smith, A. A. Talin, A. A. Talin, Steven Voight, Steven Voight, Andy Hooper, Andy Hooper, Diana Convey, Diana Convey, } "Effect of annealing temperature on physical properties of thin epitaxial PZT films on STO/Si substrates", Proc. SPIE 4804, Sol-Gel Optics VI, (23 October 2002); doi: 10.1117/12.453551; https://doi.org/10.1117/12.453551
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