24 June 2002 Elastic strain at Ge particles-Si matrix interface: a raman spectroscopic study
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Abstract
Ge clusters show luminescence at room temperature. The clusters are grown on Si substrate at room temperature (Ge-RT) and also at liquid nitrogen temperature (Ge-LNT) by cluster evaporation technique. Raman measurement demonstrates the increase in strain with annealing in diffused disordered Si at the interface between Ge-LNT clusters and Si substrate. This manifests in strain-relaxation in the clusters as observed by Photoluminescence (PL) measurements. The decrease in PL intensity for Ge-RT with annealing has been attributed to reduction in surface oxide species, which is supported by Raman spectroscopic measurements. The objective of the paper is to understand the effect of thermal annealing on both interfacial strain and interdiffusion of elemental Si at the interface, together with luminescence characteristics of the clusters.
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Anushree Roy, Anushree Roy, Sangeeta Sahoo, Sangeeta Sahoo, } "Elastic strain at Ge particles-Si matrix interface: a raman spectroscopic study", Proc. SPIE 4806, Complex Mediums III: Beyond Linear Isotropic Dielectrics, (24 June 2002); doi: 10.1117/12.472994; https://doi.org/10.1117/12.472994
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