15 November 2002 Photoluminescence and electroluminescence studies on ITO/SiO2/Si tunneling diodes for efficient light emission from silicon
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We report the finding of photoluminescence (PL) and electroluminescence (EL) studies at silicon bandgap energy for the indium-tin-oxide (ITO)/SiO2/Si metal-oxide-semiconductor (MOS) tunneling diodes. The characteristics of temporal EL response, temperature dependence of EL and PL intensities, and voltage-dependent PL intensity, were used to investigate the radiative recombination and nonradiative Shockley-Read-Hall (SRH) recombination near the Si-SiO2 interface. The temporal EL response indicates that the radiative recombination coefficient in the light-emitting MOS tunneling diode is about ten times larger than that of the bulk silicon. However, the nonradiative SRH recombination is still the dominant carrier recombination process. The intensity of EL was found to be lesser sensitive with temperature than that of PL, which indicates that the nonradiadiative recombination is less thermally active and less efficient for EL. The voltage-dependent PL study shows that the PL intensity increases with the bias voltage. This observation is attributed to the variations of nonradiative SRH recombination rates due to the change of Fermi level with the bias voltage. This study shows that the nonradiative recombination near the Si-SiO2 interface strongly influences the luminescent efficiency.
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Miin-Jang Chen, Miin-Jang Chen, Jui-Fen Chang, Jui-Fen Chang, Chen S. Tsai, Chen S. Tsai, Eih-Zhe Liang, Eih-Zhe Liang, Ching-Fuh Lin, Ching-Fuh Lin, Cheewee Liu, Cheewee Liu, } "Photoluminescence and electroluminescence studies on ITO/SiO2/Si tunneling diodes for efficient light emission from silicon", Proc. SPIE 4807, Physical Chemistry of Interfaces and Nanomaterials, (15 November 2002); doi: 10.1117/12.456728; https://doi.org/10.1117/12.456728

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