Light emission in silicon nanostructures

David J. Lockwood

doi:10.1117/12.452153

5 November 2002 Light emission in silicon nanostructures

David J. Lockwood

Proceedings Volume 4808, Optical Properties of Nanocrystals; (2002) https://doi.org/10.1117/12.452153
Event: International Symposium on Optical Science and Technology, 2002, Seattle, WA, United States

Abstract

The many and diverse approaches to materials science problems have greatly enhanced our ability in recent times to engineer the physical properties of semiconductors. Silicon, of all semiconductors, underpins nearly all microelectronics today and will continue to do so for some time to come. However, in optoelectronics, the severe disadvantage of an indirect band gap has limited the application of elemental silicon. Here we review a number of diverse approaches to engineering efficient light emission in silicon nanostructures. These different approaches are placed in context and their prospects for application in silicon-based optoelectronics are assessed.

Citation Download Citation

David J. Lockwood "Light emission in silicon nanostructures", Proc. SPIE 4808, Optical Properties of Nanocrystals, (5 November 2002); https://doi.org/10.1117/12.452153

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