5 November 2002 Observation of the third-harmonic generation in one-dimensional all-silicon microcavities
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Abstract
The enhancement of the third-harmonic generation (THG) in photonic crystal microcavities fabricated from alternating layers of mesoporous silicon is experimentally studied. Two types of THG resonances are observed in the third-harmonic intensity spectra measured in both angular and frequency domains. The THG enhancement is obtained as the fundamental radiation is in the resonance with the cavity mode and is attributed to the spatial localization of the fundamental field inside the cavity spacer and the fulfillment of the phase-matching conditions for THG. The intensive THG response is also observed as the fundamental radiation is tuned across the photonic band gap edge and is supposed to be attributed to the THG phase-matching. Additional factor for the THG enhancement is the three-photon resonance of the porous silicon cubic susceptibility.
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Tatyana V. Dolgova, Tatyana V. Dolgova, Michail G. Martemyanov, Michail G. Martemyanov, Andrew A. Fedyanin, Andrew A. Fedyanin, } "Observation of the third-harmonic generation in one-dimensional all-silicon microcavities", Proc. SPIE 4808, Optical Properties of Nanocrystals, (5 November 2002); doi: 10.1117/12.452249; https://doi.org/10.1117/12.452249
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