5 November 2002 Photoluminescence in crystalline-Si/Si02 quantum wells
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Abstract
Single nanometer-thick layers of crystalline silicon (c-Si) confined by amporphouse SiO2 have been prepared from silicon-on-insulator wafers. The photoluminescence from these ultra-thin quantum wells shows an increase in peak energy with decreasing c-Si layer thickness. Comparison with experimental results for the c-Si band gap and also with theory shows that the increase in photoluminescence peak energy is not as rapid as the measured or predicted energy gap. This difference is attributed to recombination of confined electron-hole pairs at the c-Si/SiO2 interface rather than within the quantum well.
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David J. Lockwood, David J. Lockwood, Zheng-Hong Lu, Zheng-Hong Lu, D. Grozea, D. Grozea, } "Photoluminescence in crystalline-Si/Si02 quantum wells", Proc. SPIE 4808, Optical Properties of Nanocrystals, (5 November 2002); doi: 10.1117/12.452159; https://doi.org/10.1117/12.452159
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