5 November 2002 Surface morphology of electrochemically etched porous GaP
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Abstract
The mechanisms of porous gallium phosphide formation by anodic etching are studied. Gallium phosphide porous samples <100> oriented were prepared in sulfuric acid solution with different concentrations of NaF. The current-voltage characteristic curve depends on the NaF concentrations and shows the typical behavior for porous semiconductors formation. Four regions can be distinguished in the I-V curve: a pore formation zone, a dielectric layer growth, a transition region in which the two processes compete for the control of the surface morphology and finally the GaP surface electropolishing. The oxide formation shifts to higher potential and the pore formation zone is widened by adding fluorides in the etching solution. Raman spectroscopy is applied to investigate the surface morphology of samples prepared in different anodizing current density conditions and in different acid solutions. As regards the dielectric growth, the direct observation of the sample surface and the analysis of the vibrational spectra indicate that in different potential regimes two chemically different oxides can be formed.
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Pier Carlo Ricci, Alberto Anedda, C. M. Carbonaro, F. Clemente, R. Corpino, "Surface morphology of electrochemically etched porous GaP", Proc. SPIE 4808, Optical Properties of Nanocrystals, (5 November 2002); doi: 10.1117/12.451980; https://doi.org/10.1117/12.451980
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