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7 November 2002 Atomic scale structure-property relationships of defects and interfaces in novel oxide thin films
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Abstract
The ability to analyze the chemistry, atomic and electronic structure of interfaces with atomic spatial resolution is afforded by modern scanning transmission electron microscopy techniques. By combining atomic resolution imaging with spectroscopy, structure-property relationships of functional oxide thin films can be established. In this paper, we describe two specific examples where we have applied high-spatial resolution electron energy-loss spectroscopy to dielectric thin films.
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Susanne Stemmer "Atomic scale structure-property relationships of defects and interfaces in novel oxide thin films", Proc. SPIE 4811, Superconducting and Related Oxides: Physics and Nanoengineering V, (7 November 2002); https://doi.org/10.1117/12.455838
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