7 November 2002 Field effect and ferroelectric field effect in correlated oxide films
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Abstract
We repoert on ferroelectric field effect experiments in correlated oxide films, demonstrating that a reversible, nonvolatile change in the electronic properties can be obtained upon reversing the ferroelectric polarization in epitaxial heterostructures consisting of ferroelectric Pb(Zr0.2Ti0.8) O3 and metallic or superconducting oxide layers. In particular, we show that a Tc modulation of 7 K can be obtained in very thin (~20 Å) films of high Tc superconductors. We also discuss conventional field effect experiments, where we have used a SrTiO3 gate insulator to modulate the electronic properties of a thin NdBa2Cu3O7-Δ film. In this device, the dielectric constant of SrTiO3 reaches a value of 2800 at 18 K. The polarization obtained is a few μC/cm2, which induces a modulation of the resistivity of the NdBa2Cu3O7-δ layer of ~9%.
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D. Matthey, S. Gariglio, C. H. Ahn, Jean-Marc Triscone, "Field effect and ferroelectric field effect in correlated oxide films", Proc. SPIE 4811, Superconducting and Related Oxides: Physics and Nanoengineering V, (7 November 2002); doi: 10.1117/12.455539; https://doi.org/10.1117/12.455539
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