23 January 2003 120×90 element thermopile array fabricated with CMOS technology
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Abstract
This paper presents the first-ever 120×90 element thermoelectric IR focal plane array (FPA) fabricated wiht CMOS technology. The device has a high repsonsivity of 3,900 V/W and a low cost potential. The overall chip size is 14.4 mm × 11.0 mm with a 12.0 mm × 9.0 mm imaging area. The device structure was optimzed for a vacuum-sealed package. Each detector consists of two pairs of p-n polysilicon thermocouples and an NMOS transistor and has external dimensions of 100μm x 100μm and an internal electrical resistance of 90kΩ. The precisely patterned Au-black IR absorbing layer was achieved by both a low-pressure vapor deposition technique and a lift-off technique utilizing a PSG sacrificial layer. These techniques make it possible to obtain a Au-black pattern with the same degree of accuracy as with the CMOS process. The Au-black layer showed high absorpitivty of more than 90 percent to the light source with a wavelength of from 8 to 13μm. This performance is suitable for consumer electronics as well as automotive applications.
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Masaki Hirota, Yasushi Nakajima, Masanori Saito, Fuminori Satou, Makato Uchiyama, "120×90 element thermopile array fabricated with CMOS technology", Proc. SPIE 4820, Infrared Technology and Applications XXVIII, (23 January 2003); doi: 10.1117/12.457719; https://doi.org/10.1117/12.457719
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KEYWORDS
Infrared radiation

Infrared imaging

Staring arrays

Sensors

Resistance

Thermography

Silicon

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