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23 January 2003 Antimonide-based materials for infrared detection
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Abstract
We propose that the antimonide family of semiconductors should be considered in some cases as a serious alternative to Mercury Cadmium Telluride (MCT) for the active region of next generation IR detectors, based on epitaxial materials. Among the alloys, epitaxial InAs1-ySby on GaSb with 0.07 < y < 0.11 and In1-zAlzSb on InSb with 0 < z < 0.03 together span important regions of the MWIR atmospheric window, yet exhibit strains of less than 0.15%. Both InSb and GaSb are binary substrates available in high quality. The sensitivity of bandgap to composition in In1-zAlzSb is similar to that in MCT. However, in InAs1-ySby this sensitivity is more than halved. In growth from the gas phase, the constraints on temperature stability are about 3 - 5 times lower than in MCT. Together, these characteristics make it easier to achieve high uniformity, particularly in InAs1-ySby. Finally, high quality superlattices based on InAs/Ga1-xInxSb can be grown by lattice matching to GaSb. This epitaxial material is emerging as an attractive alternative to MCT with a high degree of spatial uniformity and with an ability to span cut-off wavelengths from 3-20m in a single material system.
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Philip Klipstein, Eli Jacobsohn, Olga Klin, Michael Yassen, Zipora Calahorra, Eliezer Weiss, Salomon Risemberg, and David Rosenfeld "Antimonide-based materials for infrared detection", Proc. SPIE 4820, Infrared Technology and Applications XXVIII, (23 January 2003); doi: 10.1117/12.452046; https://doi.org/10.1117/12.452046
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