Extended backside-illuminated InGaAs on GaAs IR detectors

Joachim John; Lars Zimmermann; Patrick Merken; Gustaaf Borghs; Chris A. Van Hoof; Stefan Nemeth

doi:10.1117/12.450563

23 January 2003 Extended backside-illuminated InGaAs on GaAs IR detectors

Joachim John, Lars Zimmermann, Patrick Merken, Gustaaf Borghs, Chris A. Van Hoof, Stefan Nemeth

Proceedings Volume 4820, Infrared Technology and Applications XXVIII; (2003) https://doi.org/10.1117/12.450563
Event: International Symposium on Optical Science and Technology, 2002, Seattle, WA, United States

Abstract

Diode structures of short wavelength infrared (SWIR) InGaAs material were grown epitaxially on 3 inch GaAs substrates by molecular beam epitaxy. Despite the large lattice mismatch of 6% between In_0.8Ga_0.2As and GaAs the diode performance allows applications in spectroscopy and imaging. Photovoltaic diode characterization measures like R0A product and quantum efficiency were extracted from I-V curves. The layers are processed with standard photolithography and micro-structuring tools and finally flip-chip bonded on a silicon read out integrated circuit (ROIC). Linear arrays of 256 and 512 pixel with 25 mm pitch were fabricated as well as focal plane arrays (FPA) of 256 × 320 pixel with 30 mm pitch. Functionality is proven by using the assemblies in systems for spectroscopy and beam profiling up to 2.5 mm wavelength.

Citation Download Citation

Joachim John, Lars Zimmermann, Patrick Merken, Gustaaf Borghs, Chris A. Van Hoof, and Stefan Nemeth "Extended backside-illuminated InGaAs on GaAs IR detectors", Proc. SPIE 4820, Infrared Technology and Applications XXVIII, (23 January 2003); https://doi.org/10.1117/12.450563

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