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23 January 2003 Extended backside-illuminated InGaAs on GaAs IR detectors
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Abstract
Diode structures of short wavelength infrared (SWIR) InGaAs material were grown epitaxially on 3 inch GaAs substrates by molecular beam epitaxy. Despite the large lattice mismatch of 6% between In0.8Ga0.2As and GaAs the diode performance allows applications in spectroscopy and imaging. Photovoltaic diode characterization measures like R0A product and quantum efficiency were extracted from I-V curves. The layers are processed with standard photolithography and micro-structuring tools and finally flip-chip bonded on a silicon read out integrated circuit (ROIC). Linear arrays of 256 and 512 pixel with 25 mm pitch were fabricated as well as focal plane arrays (FPA) of 256 × 320 pixel with 30 mm pitch. Functionality is proven by using the assemblies in systems for spectroscopy and beam profiling up to 2.5 mm wavelength.
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Joachim John, Lars Zimmermann, Patrick Merken, Gustaaf Borghs, Chris A. Van Hoof, and Stefan Nemeth "Extended backside-illuminated InGaAs on GaAs IR detectors", Proc. SPIE 4820, Infrared Technology and Applications XXVIII, (23 January 2003); doi: 10.1117/12.450563; https://doi.org/10.1117/12.450563
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