Translator Disclaimer
23 January 2003 Proton irradiations of large-area Hg1-xCdxTe photovoltaic detectors for the cross-track infrared sounder
Author Affiliations +
The effect of radiation on HgCdTe photodiodes is an important parameter to understand when determining the long-term performance limitations for the Cross-track Infrared Sounder (CrIS), a Fourier Transform interferometric sensor that will fly as part of the National Polar-orbiting Operational Environmental Satellite System (NPOESS). The CrIS sensor uses relatively large area photovoltaic detectors, 1 mm in diameter. Each p-on-n HgCdTe photodiode consists of MBE grown, n-type material on lattice matched CdZnTe, with arsenic implantation used to form the junction. A 1mm diameter detector is achieved by using a lateral collection architecture. Solar, and trapped protons are a significant source of radiation in the NPOESS 833 km orbits. We irradiated 22 LWIR detectors with protons at the Harvard Cyclotron Laboratory (HCL) and monitored the I-V performance and dynamic impedance of each detector. Three groups of detectors were irradiated with either 44, 99, or 153-MeV protons, each between 1×1010 - 4×1012 p+/cm2. Several I-V data sets were collected within that fluence range at all three energies. All the detectors were warmed to room temperature for approximately 96 hours following the largest proton dose, re-cooled, and then re-characterized in terms of I-V performance and dynamic impedance. The total noise increase predicted for CrIS after 7-years in orbit is less than 1%.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael W. Kelly, E. J. Ringdahl, Arvind I. D'Souza, Scott D. Luce, and E. W. Cascio "Proton irradiations of large-area Hg1-xCdxTe photovoltaic detectors for the cross-track infrared sounder", Proc. SPIE 4820, Infrared Technology and Applications XXVIII, (23 January 2003); doi: 10.1117/12.455821;

Back to Top