23 January 2003 Two-dimensional monolithic lead-chalcogenide on active Si-substrate IRFPA
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Narrow gap IV-VI layers grown epitaxially on Si(111)-substrates by molecular beam epitaxy exhibit high quality despite the large lattice and thermal expansion mismatch. We present the further development of the first realization of a 2-d narrow gap IR-FPA an a Si-substrate containing the active addressing electronics: A 96 × 128 array with 75μm pitch for row-by row electronic scanning and parallel read-out of the line addressed. Each pixel contains a bare Si-area onto which epitaxial growth occurs, and an access transistor. A MWIR PbTe layer is grown by MBE onto completed Si-read-out substrates at temperatures below 450°C. Photovoltaic sensors are then delineated in the layers. Each pixel is connected to the Si read-out by sputtered Al-stripes. The FPA is mounted in a dewar and demonstrational thermal images are taken.
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Hans Zogg, Hans Zogg, Karim Alchalabi, Karim Alchalabi, Dmitri S. Zimin, Dmitri S. Zimin, } "Two-dimensional monolithic lead-chalcogenide on active Si-substrate IRFPA", Proc. SPIE 4820, Infrared Technology and Applications XXVIII, (23 January 2003); doi: 10.1117/12.452006; https://doi.org/10.1117/12.452006

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