9 December 2002 Single photon emitting diode
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Abstract
We report the realization of the first electrically-driven single photon source. The device is based on a GaAs p-i-n diode containing self-assembled InAs quantum dots embedded within the i-region. Time resolved electroluminescence from the device yields information on the radiative lifetimes of the single quantum dots involved. Applying a continuous current a dip is measured in the second-order correlation function at zero time delay indicating that the luminescence is antibunched. Under pulsed excitation by subnanosecond voltage pulses, strong suppression of multi-photon pulses is achieved with respect to a laser of the same average intensity. The results suggest that conventional semiconductor technology can be used to mass-produce a single photon source for applications in quantum information technology.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Martin B. Ward, Martin B. Ward, Zhiliang Yuan, Zhiliang Yuan, R. Mark Stevenson, R. Mark Stevenson, Beata E. Kardynal, Beata E. Kardynal, Charlene J. Lobo, Charlene J. Lobo, Ken Cooper, Ken Cooper, David A. Ritchie, David A. Ritchie, Andrew J. Shields, Andrew J. Shields, } "Single photon emitting diode", Proc. SPIE 4821, Free-Space Laser Communication and Laser Imaging II, (9 December 2002); doi: 10.1117/12.453760; https://doi.org/10.1117/12.453760
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