11 November 2002 Efficient optical sources in silicon using dislocation engineering
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Abstract
In this paper we describe a new approach to the manufacture of Si based optical emitters. Dislocation engineering, using entirely ULSI compatible technology has been shown to be a viable route to the production of efficient LED's operating at room temperature. External quantum efficiencies of ~ 10-4 have been realised for un-packaged devices operating at room temperature. This approach has also been shown to yield great benefits in the control of thermal quenching for other material systems, such as the FeSi2, where room temperature operational devices based at 1.5um have been demonstrated
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Russell M. Gwilliam, M. A. Lourenco, S. Galata, Kevin P. Homewood, G. Shao, "Efficient optical sources in silicon using dislocation engineering", Proc. SPIE 4823, Photonics for Space Environments VIII, (11 November 2002); doi: 10.1117/12.452222; https://doi.org/10.1117/12.452222
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KEYWORDS
Temperature metrology

Electroluminescence

Silicon

Control systems

Integration

Luminescence

Boron

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