19 November 2003 Adaptive CdTe:V photo-EMF detectors for laser ultrasonic detection
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Proceedings Volume 4829, 19th Congress of the International Commission for Optics: Optics for the Quality of Life; (2003) https://doi.org/10.1117/12.530942
Event: 19th Congress of the International Commission for Optics: Optics for the Quality of Life, 2002, Florence, Italy
Abstract
Preliminary results on utilization of CdTe:V photo-EMF detectors for broad-band (≈ 10 MHz) adaptive detection of optical phase modulation, which is necessary for laser ultrasonic applications, are reported. Unlike widely used GaAs photo-EMF detectors, devices under consideration demonstrate no remarkable electron-hole competition and ensure sensitivity necessary for detection of ≈ 2 nm surface displacement for 0.1 mW of signal beam power in simple transverse configuration without utilization of asymmetric interdigitated surface contacts. For the wavelength used (λ = 851 nm) dielectric cut-off frequency of typical CdTe:V detector was around 1 MHz, which, in principle allows us monitoring of as-processed objects moving with in-plane velocity up to 10 m/s.
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Serguei I. Stepanov, Ponciano Rodriguez-Montero, Juan Castillo Mixcoatl, Sudhir B. Trivedi, Chen Chia Wang, "Adaptive CdTe:V photo-EMF detectors for laser ultrasonic detection", Proc. SPIE 4829, 19th Congress of the International Commission for Optics: Optics for the Quality of Life, (19 November 2003); doi: 10.1117/12.530942; https://doi.org/10.1117/12.530942
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