19 November 2003 Amplified spontaneous emission in e-beam induced LiF:F2 waveguides
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Proceedings Volume 4829, 19th Congress of the International Commission for Optics: Optics for the Quality of Life; (2003) https://doi.org/10.1117/12.528310
Event: 19th Congress of the International Commission for Optics: Optics for the Quality of Life, 2002, Florence, Italy
Abstract
Electron-beam lithography techniques allow realizing channel waveguides based on laser-active color centers in lithium fluoride (LiF) emitting in the visible. Amplified spontaneous emission (ASE) of red light from F2 defects has been observed in these confining structures: the appreciable values of the gain coefficient, several cm-1, with an exciting power density of few mW/cm2, makes LiF a good candidate for the realization of active integrated optical devices.
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Rosamaria M. Montereali, Giancarlo C. Righini, Stefano Pelli, E. Burattini, Antonio Grilli, M. Piccinini, "Amplified spontaneous emission in e-beam induced LiF:F2 waveguides", Proc. SPIE 4829, 19th Congress of the International Commission for Optics: Optics for the Quality of Life, (19 November 2003); doi: 10.1117/12.528310; https://doi.org/10.1117/12.528310
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