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19 November 2003 Characterization of nanodefects in silicon wafers by white light phase shifting interferometry
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Proceedings Volume 4829, 19th Congress of the International Commission for Optics: Optics for the Quality of Life; (2003) https://doi.org/10.1117/12.526906
Event: 19th Congress of the International Commission for Optics: Optics for the Quality of Life, 2002, Florence, Italy
Abstract
Silicon wafers are widely used in semiconductor and microelectronics industries. With this material, there is an immense need to obtain defect free highly polished surface for improved yield and performance of the micro-components. The Semiconductor Industry Association's (SIA) International Technology Roadmap specifies that by 2005, 30 nm particles must be detectable on bare silicon and non-metallic films, 39 nm particles on metallic films, and 100 nm particles on wafer backsides, for which no solutions currently exist. Both surface and subsurface defects decrease reliability and manufacturing yield of semiconductor devices. Understanding the defect nature, their cause and minimization are equally important to the semiconductor industries. The present work reports on the characterization of these defects by white light phase shifting interferometry.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ganesha Udupa, Bryan Kok Ann Ngoi, H. C. Freddy Goh, M. N. Yusoff, and A. V. Patil "Characterization of nanodefects in silicon wafers by white light phase shifting interferometry", Proc. SPIE 4829, 19th Congress of the International Commission for Optics: Optics for the Quality of Life, (19 November 2003); https://doi.org/10.1117/12.526906
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