19 November 2003 Doped chalcogenide glass thin films deposited by pulsed laser ablation
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Proceedings Volume 4829, 19th Congress of the International Commission for Optics: Optics for the Quality of Life; (2003) https://doi.org/10.1117/12.525836
Event: 19th Congress of the International Commission for Optics: Optics for the Quality of Life, 2002, Florence, Italy
Abstract
Pr3+-doped chalcogenide glass (GeS2-Ga2S3-CsI) targets were ablated in vacuum (1x10-5 Pa) by XeCl laser pulses. The deposited films were plane, smooth, well adhesive to the substrate and with a composition close to the target one. The film thickness ranged from approximately 500 nm to approximately 2000 nm. The transmittance and reflectance of the deposited films were measured in the range 400 - 2500 nm. The transmittance resulted higher than 80% for wavelengths longer than 900 nm. The optical indices n and k were calculated from the experimental curve as a function of wavelength by means of a commercial computer code. The feasibility of waveguide amplifiers and laser made of Pr3+-doped chalcogenide glass was investigated by an implemented computer code.
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A. P. Caricato, M. Fernandez, Gilberto Leggieri, Armando Luches, Maurizio Martino, Francesco Prudenzano, "Doped chalcogenide glass thin films deposited by pulsed laser ablation", Proc. SPIE 4829, 19th Congress of the International Commission for Optics: Optics for the Quality of Life, (19 November 2003); doi: 10.1117/12.525836; https://doi.org/10.1117/12.525836
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