19 November 2003 Measures of near field in waveguides of InGaAs/InAlAs MQW structures for amplitude modulators
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Proceedings Volume 4829, 19th Congress of the International Commission for Optics: Optics for the Quality of Life; (2003) https://doi.org/10.1117/12.525561
Event: 19th Congress of the International Commission for Optics: Optics for the Quality of Life, 2002, Florence, Italy
Abstract
The waveguide based on semiconductors structures are devices of the great interest in optical communications systems, because they are part of more complex devices as the laser, modulators, etc. The waveguides are used to transmit the information from one device to another with just a few losses. This is why a good characterization of the measure of the modal behavior and the distribution profile of the electromagnetic field in waveguide structure are necessary. Our waveguide has a core composed by a structure of MQW of InGaAs/InAlAs. The core is confined between a cladding and buffer layer of InAlAs. This layer was grown on a substrate of InP by LP-MOCVD technique. The waveguide was processed using photolithography and chemical etch conventional technique. In order to characterize the waveguide the near field technique was implemented.
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Francisco J. Racedo N., Francisco J. Racedo N., Maurico Pamplona Pires, Maurico Pamplona Pires, P. L. Souza, P. L. Souza, } "Measures of near field in waveguides of InGaAs/InAlAs MQW structures for amplitude modulators", Proc. SPIE 4829, 19th Congress of the International Commission for Optics: Optics for the Quality of Life, (19 November 2003); doi: 10.1117/12.525561; https://doi.org/10.1117/12.525561
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